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Same model may have multiple batches, images only for reference.
IRGPS46160DPBF Real Image
Same model may have multiple batches, images only for reference.

IRGPS46160DPBF

Part No IRGPS46160DPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 240A 750W SUPER247 / INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon Technologies
Packaging Tube
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 240A
Current - Collector Pulsed (Icm) 360A
Vce(on) (Maximum) at Vge, Ic 2.05V at 15V, 120A
Power - Max 750W
Switching Energy 5.75mJ (on), 3.43mJ (off)
Input Type Standard
Gate Charge 240nC
Td (on/off) at 25°C 80ns/190ns
Test Condition 400V, 120A, 4.7Ohm, 15V
Reverse Recovery Time (trr) 130ns
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package SUPER-247 (TO-274AA)
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 812335-IRGPS46160DPBF
Ultra Librarian 3D Model Ultra Librarian IRGPS46160DPBF CAD Model

Description

The Infineon Technologies IRGPS46160DPBF is a through-hole mounting style device with a maximum power of 750W.

  • Mounting Style: Through-Hole
  • Power - Max: 750W
  • Component Type: IGBT
  • Current Collector Pulsed (Icm): 360A
  • Switching Energy: 5.75mJ (on), 3.43mJ (off)
  • Gate Charge: 240nC
  • Reverse Recovery Time (trr): 130ns
  • Voltage Collector Emitter Breakdown (Maximum): 600V
  • Current Collector (Ic) (Maximum): 240A
  • Package: SUPER-247 (TO-274AA)
  • Popularity: Low
  • Manufacturer Pack Quantity: 25
  • MSL Level: 1 (Unlimited)
  • Vce(on) (maximum) @ Vge, Ic: 2.05V @ 15V, 120A
  • Td (on/off) @ 25°C: 80ns/190ns

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