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Same model may have multiple batches, images only for reference.
IRGS30B60KPBF Real Image
Same model may have multiple batches, images only for reference.

IRGS30B60KPBF

Part No IRGS30B60KPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR | IGBT 600V 78A 370W D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 78A
Current - Collector Pulsed (Icm) 120A
Vce(on) (Maximum) at Vge, Ic 2.35V at 15V, 30A
Maximum Power 370W
Switching Energy 350μJ (on), 825μJ (off)
Input Type Standard
Gate Charge 102nC
Td (on/off) at 25°C 46ns/185ns
Test Condition 400V, 30A, 10Ohm, 15V
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Family Part Number IRGS30B60KPBF
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188405-IRGS30B60KPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRGS30B60KPBF CAD Model

Description

The Infineon Technologies IRGS30B60KPBF is an obsolete semiconductor product with a limited supply and demand status and a medium popularity.

  • Type: NPT IGBT
  • Maximum Collector Current: 78A
  • Collector-Emitter Breakdown Voltage: 600V
  • Mounting: D2PAK package
  • Temperature Range: -55°C to 175°C
  • Manufacturer Pack Quantity: 50
  • Maximum Power: 370W

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