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Same model may have multiple batches, images only for reference.
IRGB8B60KPBF Real Image
Same model may have multiple batches, images only for reference.

IRGB8B60KPBF

Part No IRGB8B60KPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR | IGBT 600V 28A 167W TO220AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 28A
Current - Collector Pulsed (Icm) 26A
Vce(on) (Maximum) at Vge, Ic 2.2V at 15V, 8A
Maximum Power 167W
Switching Energy 160μJ (on), 160μJ (off)
Input Type Standard
Gate Charge 18.2nC
Td (on/off) at 25°C 23ns/140ns
Test Condition 400V, 5A, 100Ohm, 15V
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Manufacturer Package TO-220-3
Supplier Device Package TO-220AB
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1188345-IRGB8B60KPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRGB8B60KPBF CAD Model

Description

The IRGB8B60KPBF is an NPT IGBT transistor manufactured by Infineon Technologies.

  • Popularity: Medium
  • Supply and Demand Status: Limited
  • Maximum On-State Voltage: 2.2V @ 15V gate-emitter voltage and 8A collector current
  • Gate Charge: 18.2nC
  • Switching Energy (On): 160μJ
  • Switching Energy (Off): 160μJ
  • Package: TO-220AB
  • Product Category: Discrete Semiconductor Products

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70+ $2.4832 $173.8240
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125+ $2.3229 $290.3625
167+ $2.0826 $347.7942
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Availability: 5,000 pieces
MOQ: 19 pcs
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