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IRLZ44NL

Part No IRLZ44NL
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Power MOSFET(Vdss=55V, Rds(on)=0.022ohm, Id=47A) | MOSFET N-CH 55V 47A TO-262
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 55V
Id - Continuous Drain Current 47A
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Maximum) at Id, Vgs 22mOhm at 25A, 10V
Gate Source Voltage(th) (Maximum) at Id 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 48nC at 5V
Gate Source Voltage (Maximum) ±16V
Input Capacitance (Ciss) (Maximum) at Vds 1700pF at 25V
Power Dissipation (Maximum) 3.8W, 110W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-262
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188701-IRLZ44NL
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLZ44NL CAD Model

Description

The Infineon Technologies IRLZ44NL is a MOSFET transistor with N-channel polarity and a drain-source breakdown voltage of 55V.

  • Continuous Drain Current: It has a continuous drain current of 47A.
  • Rds On (Maximum): The Rds On (Maximum) is 22mOhm @ 25A and 10V.
  • Gate-Source Voltage(th): The gate-source voltage(th) is 2V @ 250μA.
  • Gate Charge (Qg): The gate charge (Qg) is 48nC @ 5V.
  • Input Capacitance (Ciss): The input capacitance (Ciss) is 1700pF @ 25V.
  • Package: The device is packaged in a TO-262-3 Long Leads, I2Pak, TO-262AA package.
  • Power Dissipation: It has a power dissipation of 3.8W and 110W maximum.
  • Application: It is suitable for use in discrete semiconductor products.
  • Status: It has a limited supply and demand status.

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