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IRL100HS121

Part No IRL100HS121
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 42mOhm @ 6.7A, 10V
Vgs(th) (Max) @ Id 2.3V @ 10µA
Gate Charge (Qg) (Max) @ Vgs 5.6 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 50 V
Power Dissipation (Max) 11.5W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 6-PQFN Dual (2x2)
Package / Case 6-PowerVDFN
Base Product Number IRL100
Other Names SP001592836,IRL100HS121TR,IRL100HS121DKR,IRL100HS121CT,IRL100HS121
Standard Package 4,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278385-IRL100HS121
Ultra Librarian 3D Model Ultra Librarian IRL100HS121 CAD Model

Description

The IRL100HS121 is an N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • MOSFET Type: N-Channel
  • Drain to Source Voltage: 100 V
  • Continuous Drain Current: 11A @ 25°C
  • Rds On (Max) @ Id, Vgs: 42mOhm @ 6.7A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
  • Power Dissipation: 11.5W (Tc)
  • Temperature Range: -55°C ~ 175°C (TJ)
  • Package: 6-PowerVDFN
  • Supplier Device Package: 6-PQFN Dual (2x2)

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1642 $52.3890
105+ $0.9553 $100.3065
165+ $0.9254 $152.6910
225+ $0.8956 $201.5100
290+ $0.8657 $251.0530
390+ $0.7762 $302.7180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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