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Same model may have multiple batches, images only for reference.
IRL1104S Real Image
Same model may have multiple batches, images only for reference.

IRL1104S

Part No IRL1104S
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 104A D2PAK
Datasheet
IRL1104S Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 104A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 68nC @ 4.5V
Max Input Capacitance 3445pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 2.4W (Ta), 167W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 62A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 121916-IRL1104S
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL1104S CAD Model

Description

The Infineon Technologies MOSFET transistor, part number IRL1104S, is an N-channel polarity discrete semiconductor product.

  • Package Type: D2PAK
  • Status: Obsolete
  • Supply and Demand Status: Balance
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 104A (Tc)
  • Maximum Gate Charge: 68nC @ 4.5V
  • Maximum Rds On at Id,Vgs: 8 mOhm @ 62A, 10V
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate-Source Voltage: ±16V
  • Maximum Input Capacitance: 3445pF @ 25V
  • Maximum Power Dissipation: 2.4W (Ta) and 167W (Tc)
  • Mounting: SMD (SMT)

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Quantity Unit Price Ext. Price
35+ $1.8365 $64.2775
80+ $1.5073 $120.5840
120+ $1.4599 $175.1880
165+ $1.4126 $233.0790
215+ $1.3652 $293.5180
285+ $1.2243 $348.9255
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