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IRL2505STRR

Part No IRL2505STRR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 104A D2PAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 104A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 130nC @ 5V
Max Input Capacitance 5000pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.8W (Ta), 200W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 54A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047434-IRL2505STRR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL2505STRR CAD Model

Description

The Infineon Technologies IRL2505STRR is a MOSFET with a N-Channel Polarity. Infineon Technologies IRL2505STRR

  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 104A (Tc)
  • Mounting Type: Surface Mount
  • Case / Package: D2PAK
  • Temperature Range: -55°C to 175°C (TJ)
  • Maximum Gate-Source Voltage: ±16V
  • Supply and Demand Status: Balance
  • Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
  • Drive Voltage : 4V, 10V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Max Gate Charge: 130nC @ 5V
  • Max Input Capacitance: 5000pF @ 25V
  • Maximum Rds On @ Id,Vgs: 8 mOhm @ 54A, 10V

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