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Same model may have multiple batches, images only for reference.
IRL3103STRRPBF Real Image
Same model may have multiple batches, images only for reference.

IRL3103STRRPBF

Part No IRL3103STRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 64A D2PAK / Trans MOSFET N-CH Si 30V 64A 3-Pin(2+Tab) D2PAK T/R
Datasheet
IRL3103STRRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series HEXFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 1V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 33nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds 1650pF @ 25V
Vgs (Maximum) ±16V
Power Dissipation (Maximum) 94W (Tc)
Rds On (Maximum) @ Id, Vgs 12 mOhm @ 34A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package D2PAK
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 777111-IRL3103STRRPBF
Popularity Medium
Supply and Demand Status Balance
Family Name IRL3103
Introduction Date April 30, 2004
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRL3103STRRPBF CAD Model

Description

The Infineon Technologies IRL3103STRRPBF HEXFET MOSFET is a high-performance transistor that is designed to be used in a variety of applications.

  • Continuous Drain Current: 64A (Tc)
  • Maximum Power Dissipation: 94W (Tc)
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Mounting Type: SMD
  • Gate Charge (Qg): 33nC @ 4.5V
  • Input Capacitance (Ciss): 1650pF @ 25V
  • Drain-Source Voltage: 30V
  • Gate-Source Voltage: ±16V
  • Family: IRL3103
  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)
  • Compliance: ECCN: EAR99, Halogen-Free

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