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IRL3202STRR

Part No IRL3202STRR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 48A D2PAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 7V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 43nC @ 4.5V
Max Input Capacitance 2000pF @ 15V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 69W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 29A, 7V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047450-IRL3202STRR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL3202STRR CAD Model

Description

The Infineon Technologies IRL3202STRR is a N-channel MOSFET transistor with a drain-source breakdown voltage of 20V and a continuous drain current of 48A @ 25°C.

  • Power Dissipation: 69W
  • Maximum Rds On: 16 mOhm @ Id,Vgs of 29A, 7V
  • Case/Package: D2PAK
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Lifecycle Status: Obsolete (EOL)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Gate-Source Threshold Voltage: 700mV @ 250μA
  • Maximum Gate Charge: 43nC @ 4.5V

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