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IRL3302PBF

Part No IRL3302PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 39A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 7V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 31nC @ 4.5V
Max Input Capacitance 1300pF @ 15V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 57W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 23A, 7V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1047451-IRL3302PBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IRL3302PBF CAD Model

Description

The Infineon Technologies IRL3302PBF is an N-channel MOSFET transistor that is designed for use in discrete semiconductor products.

  • Power Dissipation: 57W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 39A (Tc)
  • Maximum Rds On @ Id,Vgs: 20 mOhm @ 23A, 7V
  • Gate-Source Threshold Voltage: 700mV @ 250μA
  • Maximum Gate Charge: 31nC @ 4.5V
  • Package: TO-220AB
  • Dimension: TO-220-3
  • Mounting: Through Hole
  • Drive Voltage: 4.5V, 7V
  • Supply and Demand Status: Balanced
  • Quantity per Package: 50 Pieces

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8408 $58.8560
170+ $0.6907 $117.4190
260+ $0.6687 $173.8620
360+ $0.6468 $232.8480
465+ $0.6260 $291.0900
620+ $0.5613 $348.0060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,049 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?

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