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Same model may have multiple batches, images only for reference.
IRL3302SPBF Real Image
Same model may have multiple batches, images only for reference.

IRL3302SPBF

Part No IRL3302SPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 39A D2PAK
Datasheet
IRL3302SPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 7V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 31nC @ 4.5V
Max Input Capacitance 1300pF @ 15V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 57W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 23A, 7V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047452-IRL3302SPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IRL3302SPBF CAD Model

Description

The Infineon Technologies 1047452-IRL3302SPBF is an N-channel MOSFET with a maximum power dissipation of 57W (Tc).

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 39A (Tc) @ 25°C
  • Package: D2PAK
  • Category: Discrete Semiconductor Product
  • Lifecycle Status: Obsolete (EOL)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Popularity: Medium
  • Package Quantity: 50 units

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