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Same model may have multiple batches, images only for reference.
IRL3303LPBF Real Image
Same model may have multiple batches, images only for reference.

IRL3303LPBF

Part No IRL3303LPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 38A TO-262
Datasheet
IRL3303LPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 26nC @ 4.5V
Max Input Capacitance 870pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.8W (Ta), 68W (Tc)
Maximum Rds On at Id,Vgs 26 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1047455-IRL3303LPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IRL3303LPBF CAD Model

Description

The Infineon Technologies 1047455-IRL3303LPBF MOSFET is a through-hole mounting N-Channel polarity component that is part of the Discrete Semiconductor Products category.

  • Manufacturer: Infineon Technologies
  • Product Name: 1047455-IRL3303LPBF
  • Type: MOSFET
  • Polarity: N-Channel
  • Mounting: Through-Hole
  • Category: Discrete Semiconductor Products
  • Power Dissipation: 3.8W (Ta), 68W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 38A (Tc) @ 25°C
  • Rds On: 26 mOhm @ 20A, 10V
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Gate Charge: 26nC @ 4.5V

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