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Same model may have multiple batches, images only for reference.
IRL3705ZLPBF Real Image
Same model may have multiple batches, images only for reference.

IRL3705ZLPBF

Part No IRL3705ZLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A TO-262
Datasheet
IRL3705ZLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 60nC @ 5V
Max Input Capacitance 2880pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 130W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 52A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1047467-IRL3705ZLPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL3705ZLPBF CAD Model

Description

The Infineon Technologies IRL3705ZLPBF is an N-Channel MOSFET transistor that is designed for use in discrete semiconductor products.

  • Power Dissipation: 130W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 75A (Tc) @ 25°C
  • Maximum Rds On: 8 mOhm @ 52A, 10V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 60nC @ 5V
  • Maximum Input Capacitance: 2880pF @ 25V
  • Maximum Gate-Source Voltage: ±16V
  • Package: TO-262-3 long leads, I2Pak, TO-262AA

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.0149 $60.4470
70+ $1.6533 $115.7310
110+ $1.6017 $176.1870
150+ $1.5500 $232.5000
195+ $1.4983 $292.1685
260+ $1.3433 $349.2580
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Availability: 26,300 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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