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Same model may have multiple batches, images only for reference.
IRL3715PBF Real Image
Same model may have multiple batches, images only for reference.

IRL3715PBF

Part No IRL3715PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 54A TO-220AB
Datasheet
IRL3715PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 17nC @ 4.5V
Max Input Capacitance 1060pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 71W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 26A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1047480-IRL3715PBF
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IRL3715PBF CAD Model

Description

The Infineon Technologies 1047480-IRL3715PBF is a high-performance N-channel MOSFET transistor designed for use in various applications.

  • Manufacturer: Infineon Technologies
  • Channel Type: N-channel MOSFET
  • Mounting Type: Through-Hole
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 54A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 17nC @ 4.5V
  • Maximum Input Capacitance: 1060pF @ 10V
  • Maximum Rds On at Id, Vgs: 14 mOhm @ 26A, 10V

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17+ $6.8942 $117.2014
26+ $6.6782 $173.6332
36+ $6.4634 $232.6824
47+ $6.2474 $293.6278
62+ $5.6018 $347.3116
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Availability: 12,000 pieces
MOQ: 7 pcs
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