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Same model may have multiple batches, images only for reference.
IRL3715ZCSPBF Real Image
Same model may have multiple batches, images only for reference.

IRL3715ZCSPBF

Part No IRL3715ZCSPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 50A D2PAK
Datasheet
IRL3715ZCSPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.55V @ 250μA
Max Gate Charge 11nC @ 4.5V
Max Input Capacitance 870pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 11 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047485-IRL3715ZCSPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL3715ZCSPBF CAD Model

Description

The Infineon Technologies 1047485-IRL3715ZCSPBF is a N-Channel MOSFET with a maximum power dissipation of 45W (Tc) and a drain-source breakdown voltage of 20V.

  • Continuous Drain Current: 50A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.55V @ 250μA
  • Maximum Gate Charge: 11nC @ 4.5V
  • Maximum Input Capacitance: 870pF @ 10V
  • Maximum Rds On: 11 mOhm @ 15A, 10V
  • Case/Package: D2PAK
  • Dimensions: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Category: Discrete Semiconductor Products
  • Lifecycle Status: Obsolete (EOL)

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115+ $1.5569 $179.0435
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270+ $1.3063 $352.7010
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