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FQPF5N30

Part No FQPF5N30
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 300V N-Channel MOSFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series QFET
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 300V
Current - Continuous Drain (Id) @ 25°C 3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 13nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 430pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 35W (Tc)
Rds On (Maximum) @ Id, Vgs 900 mOhm @ 1.95A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220F
Package TO-220-3 Full Pack
Win Source Part Number 1175485-FQPF5N30
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name FQPF5N30
Introduction Date May 17, 2000
ECCN EAR99
Country of Origin China, Republic of Korea
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian FQPF5N30 CAD Model

Description

The FQPF5N30 is a MOSFET transistor designed for use in a wide range of applications manufactured by Fairchild/ON Semiconductor.

  • Supply and Demand Status: Limited
  • Description: A reliable and efficient component that can be used in a variety of electronic devices.
  • Series: QFET
  • Package: TO-220-3 Full Pack
  • Operating Temperature: -55°C to 150°C (TJ)
  • Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Channel Type: N
  • Drain Source Voltage: 300V
  • Gate Charge (Qg) (maximum) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (maximum) @ Vds: 430pF @ 25V
  • Vgs (maximum): ±30V
  • Power Dissipation (maximum): 35W (Tc)
  • Rds On (maximum) @ Id, Vgs: 900 mOhm @ 1.95A, 10V
  • Product Status: Obsolete (EOL)

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