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Same model may have multiple batches, images only for reference.
IRL5NJ024
Same model may have multiple batches, images only for reference.

IRL5NJ024

Part No IRL5NJ024
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 11 A
Drain to Source Breakdown Voltage 55 V
Gate to Source Voltage (Vgs) 16 V
Lead Free Contains Lead
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 3
On-State Resistance 100 mΩ
Packaging Bulk
Power Dissipation 35 W
Radiation Hardening No
RoHS Non-Compliant
Win Source Part Number 1026636-IRL5NJ024
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IRL5NJ024 CAD Model

Description

The IRL5NJ024 is an N-channel power MOSFET in a TO-251AA package.

  • It is designed for applications such as power supplies, motor control, and DC-DC converters.
  • The device has a maximum continuous drain current of 11A and a breakdown voltage of 55V.
  • The on-state resistance of this MOSFET is 100mOhm, which ensures low power dissipation.
  • The IRL5NJ024 is a surface mount device (SMD) and is mounted on a bulk package.
  • This device has protection features such as over-current, over-temperature, over-voltage, and short-circuit protection.
  • The IRL5NJ024 is a popular choice for low voltage, high current applications.

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