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Same model may have multiple batches, images only for reference.
IRL7833LPBF Real Image
Same model may have multiple batches, images only for reference.

IRL7833LPBF

Part No IRL7833LPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 150A TO-262
Datasheet
IRL7833LPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 250μA
Max Gate Charge 47nC @ 4.5V
Max Input Capacitance 4170pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 3.8 mOhm @ 38A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1047524-IRL7833LPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL7833LPBF CAD Model

Description

The IRL7833LPBF from Infineon Technologies is an N-Channel MOSFET type electronic component that has a drain-source breakdown voltage of 30V and a continuous drain current of 150A (Tc).

  • MOSFET Type: N-Channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 150A (Tc)
  • Gate-Source Threshold Voltage: 2.3V @ 250μA
  • Maximum Gate Charge: 47nC @ 4.5V
  • Package/Case: TO-262
  • Mounting Type: Through Hole
  • Maximum Rds On @ Id, Vgs: 3.8 mOhm @ 38A, 10V
  • Maximum Input Capacitance: 4170pF @ 15V
  • Status: Obsolete (EOL)
  • Popularity: Medium

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