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IRLB3813PBF Infineon Technologies IRLB3813PBF real image379
Same model may have multiple batches, images only for reference.
IRLB3813PBF Infineon Technologies IRLB3813PBF real image379
IRLB3813PBF Infineon Technologies IRLB3813PBF real image379
Same model may have multiple batches, images only for reference.

IRLB3813PBF

Part No IRLB3813PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 260A TO-220AB
Datasheet
IRLB3813PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 260A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 150μA
Max Gate Charge 86nC @ 4.5V
Max Input Capacitance 8420pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 230W (Tc)
Maximum Rds On at Id,Vgs 1.95 mOhm @ 60A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 040800-IRLB3813PBF
Family Name IRLB3813
Introduction Date July 03, 2009
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLB3813PBF CAD Model

Description

The Infineon Technologies 040800-IRLB3813PBF is an N-Channel MOSFET with a Drain-Source Breakdown Voltage of 30V and a Continuous Drain Current of 260A (Tc).

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 260A (Tc)
  • Gate-Source Threshold Voltage: 2.35V @ 150μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 1.95 mOhm @ 60A, 10V
  • Package: TO-220AB
  • Dimensions: TO-220-3

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