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Same model may have multiple batches, images only for reference.
IRLHM630TR2PBF Real Image
Same model may have multiple batches, images only for reference.

IRLHM630TR2PBF

Part No IRLHM630TR2PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 21A PQFN
Datasheet
IRLHM630TR2PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 21A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 1.1V @ 50μA
Max Gate Charge 62nC @ 4.5V
Max Input Capacitance 3170pF @ 25V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.7W (Ta), 37W (Tc)
Maximum Rds On at Id,Vgs 3.5 mOhm @ 20A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (3x3)
Dimension 8-VQFN Exposed Pad
Win Source Part Number 1047541-IRLHM630TR2PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLHM630TR2PBF CAD Model

Description

The Infineon Technologies 1047541-IRLHM630TR2PBF is a MOSFET transistor with N-channel polarity.

  • Power Dissipation: 2.7W (Ta) and 37W (Tc)
  • Drive Voltage: 2.5V and 10V
  • Package: PQFN (3x3)
  • Dimension: 8-VQFN Exposed Pad
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 21A (Ta) and 40A (Tc) @ 25°C
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Rds On at Id, Vgs: 3.5 mOhm @ 20A, 4.5V

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