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IRLHS6242TR2PBF

Part No IRLHS6242TR2PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 10A PQFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 10A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.1V @ 10μA
Max Gate Charge 14nC @ 4.5V
Max Input Capacitance 1110pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.98W (Ta), 9.6W (Tc)
Maximum Rds On at Id,Vgs 11.7 mOhm @ 8.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-PQFN (2x2)
Dimension 6-PowerVDFN
Win Source Part Number 1047544-IRLHS6242TR2PBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRLHS6242TR2PBF CAD Model

Description

The Infineon Technologies IRLHS6242TR2PBF MOSFET is a N-Channel power transistor that is suitable for use in a wide range of applications.

  • Maximum Power Dissipation: 1.98W (Ta)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 10A (Ta), 12A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 1.1V @ 10μA
  • Maximum Gate Charge: 14nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 11.7 mOhm @ 8.5A, 4.5V
  • Mounting: SMD (SMT)
  • Package: 6-PQFN (2x2)
  • Temperature Range: -55°C to 150°C (TJ)
  • Category: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3361 $58.8175
420+ $0.2760 $115.9200
650+ $0.2680 $174.2000
895+ $0.2587 $231.5365
1,155+ $0.2506 $289.4430
1,550+ $0.2241 $347.3550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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