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IRLI2910

Part No IRLI2910
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 100V 31A TO220FP
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 31A
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Maximum) at Id, Vgs 26mOhm at 16A, 10V
Gate Source Voltage(th) (Maximum) at Id 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 140nC at 5V
Gate Source Voltage (Maximum) ±16V
Input Capacitance (Ciss) (Maximum) at Vds 3700pF at 25V
Power Dissipation (Maximum) 63W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220AB Full-Pak
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188539-IRLI2910
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLI2910 CAD Model

Description

The Infineon Technologies IRLI2910 is a through-hole N-channel MOSFET with a maximum drain-source breakdown voltage of 100V and a continuous drain current of 31A.

  • Mounting Type: Through-hole
  • Channel Type: N-channel
  • Maximum Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 31A
  • Gate Charge: 140nC @ 5V
  • Gate-Source Voltage: ±16V
  • Application: Discrete semiconductor products
  • Package: TO-220AB full-pak

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $34.4117 $68.8234
4+ $28.2353 $112.9412
6+ $27.3529 $164.1174
8+ $26.4706 $211.7648
10+ $25.5882 $255.8820
14+ $22.9412 $321.1768
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,206 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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