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IRLML6402TRPBF-1

Part No IRLML6402TRPBF-1
Manufacturer Infineon Technologies
Catalog OEM Souring
Description MOSFET -20V Single P-Channel HEXFET Power Micro3 SOT-23
Sample
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ECAD Module
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Category OEM Souring
Win Source Part Number 1463572-IRLML6402TRPBF-1
Manufacturer Infineon Technologies
Package Tape & Reel (TR)
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 65 mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 633 pF @ 10 V
Power Dissipation (Max) 1.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Mounting Type Surface Mount
Supplier Device Package Micro3™/SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3
Ultra Librarian 3D Model Ultra Librarian IRLML6402TRPBF-1 CAD Model

Description

The IRLML6402TRPBF-1 from Infineon Technologies is a high-performance, single P-channel HEXFET Power MOSFET housed in a compact Micro3 (SOT-23) package. Its -20V operating voltage makes it suitable for low-power applications such as portable devices, wearables, and other space-constrained products requiring efficient power management. This MOSFET's low on-resistance and high switching speeds make it an excellent choice for applications demanding low power dissipation and high efficiency. The device's HEXFET technology leverages advanced processing techniques to minimize on-state resistance and optimize its performance across a variety of loads and operating conditions. This, combined with its small footprint, enables designers to create more energy-efficient and compact products without sacrificing performance.

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