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IRLR024ZTRLPBF

Part No IRLR024ZTRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 16A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 9.9nC @ 5V
Max Input Capacitance 380pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 58 mOhm @ 9.6A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 040806-IRLR024ZTRLPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Power Management, Motor Drive & Control, Industrial
Quantity per package 6k pcs
Ultra Librarian 3D Model Ultra Librarian IRLR024ZTRLPBF CAD Model

Description

The Infineon Technologies IRLR024ZTRLPBF is an N-Channel MOSFET transistor that offers a drain-source breakdown voltage of 55V and a continuous drain current of 16A at 25°C.

  • Maximum Power Dissipation: 35W (Tc)
  • Maximum Rds On: 58 mOhm @ 9.6A and 10V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 9.9nC @ 5V
  • Maximum Input Capacitance: 380pF @ 25V
  • Temperature Range: -55°C to 175°C (TJ)
  • Package: D-Pak

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