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IRLR2905Z

Part No IRLR2905Z
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 42A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 35nC @ 5V
Max Input Capacitance 1570pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 13.5 mOhm @ 36A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 61569-IRLR2905Z
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLR2905Z CAD Model

Description

The Infineon Technologies MOSFET is a high-performance N-channel power transistor that is suitable for use in a variety of applications, including power supplies, motor control, and lighting.

  • Maximum Power Dissipation: 110W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 42A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 35nC @ 5V
  • Maximum Rds On at Id,Vgs: 13.5 mOhm @ 36A, 10V
  • Package: D-Pak case
  • Surface-Mounting: yes
  • Temperature Range: -55°C to 175°C (TJ)
  • Status: active

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Pricing & Ordering

Quantity Unit Price Ext. Price
195+ $0.2601 $50.7195
415+ $0.2434 $101.0110
640+ $0.2350 $150.4000
920+ $0.2182 $200.7440
1,195+ $0.2098 $250.7110
1,490+ $0.2014 $300.0860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,495 pieces
MOQ: 195 pcs
Order Increment : 1 pcs
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