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IRLR3103TR

Part No IRLR3103TR
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET® Power MOSFET | MOSFET N-CH 30V 55A DPAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 55A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 19mOhm at 33A, 10V
Gate Source Voltage(th) (Maximum) at Id 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 50nC at 4.5V
Gate Source Voltage (Maximum) ±16V
Input Capacitance (Ciss) (Maximum) at Vds 1600pF at 25V
Power Dissipation (Maximum) 107W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D-Pak
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 2,000
MSL Level 1 (Unlimited)
Win Source Part Number 1188622-IRLR3103TR
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLR3103TR CAD Model

Description

The IRLR3103TR is a 30V, N-Channel Logic Level MOSFET manufactured by Infineon Technologies. It is designed for a broad range of applications, focusing on efficient power switching and control. This MOSFET is particularly suitable for low-voltage, high-current applications such as DC-DC converters, motor control, and load switching in automotive and industrial environments.

Applications

  • DC-DC Converters
  • Motor Control
  • Load Switching
  • Power Management Systems
  • Automotive Electronics

Features

  • N-Channel MOSFET
  • Voltage Rating: 30V
  • Logic Level Gate Drive
  • Low On-State Resistance (Rds(on))
  • Fast Switching Speed
  • Surface Mount Package (TO-252/D-PAK)

Benefits

  • Efficient Power Switching: Low Rds(on) minimizes power losses, enhancing overall system efficiency.
  • Logic Level Compatibility: Can be directly driven by logic-level signals, simplifying circuit design and reducing component count.
  • Fast Switching: Fast switching speed enables efficient operation in high-frequency applications.
  • Compact Design: The TO-252 package provides a balance between thermal performance and board space utilization.
  • Enhanced Thermal Performance: Designed for efficient heat dissipation, ensuring reliable operation even at higher currents.

Additional Details

The IRLR3103TR incorporates advanced trench MOSFET technology, which contributes to its low on-state resistance and fast switching characteristics. Its gate threshold voltage is specifically designed for compatibility with logic-level circuits, making it easy to integrate into microcontroller-based systems. The TO-252 (D-PAK) package offers good thermal performance while allowing for surface mount assembly, which helps to reduce manufacturing costs. This MOSFET is suitable for various power management and control applications, especially where logic-level drive, efficient switching, and compact size are critical requirements. Its robust design and electrical characteristics make it a reliable choice for both industrial and automotive environments.

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6217 $52.8445
200+ $0.5102 $102.0400
305+ $0.4942 $150.7310
420+ $0.4783 $200.8860
545+ $0.4623 $251.9535
725+ $0.4145 $300.5125
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 680 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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