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Same model may have multiple batches, images only for reference.
IRLR3636PBF Real Image
Same model may have multiple batches, images only for reference.

IRLR3636PBF

Part No IRLR3636PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 50A D-PAK
Datasheet
IRLR3636PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 100μA
Max Gate Charge 49nC @ 4.5V
Max Input Capacitance 3779pF @ 50V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 143W (Tc)
Maximum Rds On at Id,Vgs 6.8 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047605-IRLR3636PBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRLR3636PBF CAD Model

Description

The Infineon Technologies 1047605-IRLR3636PBF is an N-channel MOSFET that has a maximum drain-source breakdown voltage of 60V and a continuous drain current of 50A at 25°C.

  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage (Max): 60V
  • Continuous Drain Current: 50A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 100μA
  • Gate Charge (Max): 49nC @ 4.5V
  • Mounting Type: Surface-Mount
  • Package: D-Pak
  • Operating Temperature: -55°C to 175°C
  • Type: Power MOSFET

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7311 $51.1770
150+ $0.6848 $102.7200
230+ $0.6617 $152.1910
325+ $0.6154 $200.0050
425+ $0.5923 $251.7275
530+ $0.5692 $301.6760
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Availability: 26,420 pieces
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