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IRLR3636TRPBF Real Image IRLR3636TRPBF real image IRLR3636TRPBF real image414 IRLR3636TRPBF Real Image1 IRLR3636TRPBF Real Image2 IRLR3636TRPBF Real Image3 IRLR3636TRPBF Real Image4
Same model may have multiple batches, images only for reference.
IRLR3636TRPBF Real Image IRLR3636TRPBF real image IRLR3636TRPBF real image414 IRLR3636TRPBF Real Image1 IRLR3636TRPBF Real Image2 IRLR3636TRPBF Real Image3 IRLR3636TRPBF Real Image4
IRLR3636TRPBF Real Image IRLR3636TRPBF real image IRLR3636TRPBF real image414 IRLR3636TRPBF Real Image1 IRLR3636TRPBF Real Image2 IRLR3636TRPBF Real Image3 IRLR3636TRPBF Real Image4
Same model may have multiple batches, images only for reference.

IRLR3636TRPBF

Part No IRLR3636TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 50A DPAK
Datasheet
IRLR3636TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 100μA
Max Gate Charge 49nC @ 4.5V
Max Input Capacitance 3779pF @ 50V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 143W (Tc)
Maximum Rds On at Id,Vgs 6.8 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 017799-IRLR3636TRPBF
Family Name IRLR3636
Introduction Date February 06, 2009
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLR3636TRPBF CAD Model

Description

The Infineon Technologies IRLR3636TRPBF is a N-channel MOSFET transistor with a drain-source breakdown voltage of 60V and a continuous drain current of 50A at 25°C.

  • Gate-Source Threshold Voltage: 2.5V
  • Maximum Gate Charge: 49nC
  • Maximum Rds On at Id, Vgs: 6.8 mOhm @ 50A, 10V
  • Technology: SMD (SMT)
  • Package: D-Pak
  • Family: IRLR3636
  • Category: Discrete Semiconductor Products
  • Power Dissipation: 143W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Popularity: Commonly used part and has a high popularity
  • Estimated EOL Date: 2024
  • Halogen-Free: Compliant with halogen-free regulations

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150+ $0.6802 $102.0300
230+ $0.6589 $151.5470
315+ $0.6377 $200.8755
410+ $0.6164 $252.7240
545+ $0.5526 $301.1670
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