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Same model may have multiple batches, images only for reference.
IRLR3705ZPBF Real Image
Same model may have multiple batches, images only for reference.

IRLR3705ZPBF

Part No IRLR3705ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 42A DPAK
Datasheet
IRLR3705ZPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 66nC @ 5V
Max Input Capacitance 2900pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 130W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 42A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 017800-IRLR3705ZPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Power Management, Motor Drive & Control
Ultra Librarian 3D Model Ultra Librarian IRLR3705ZPBF CAD Model

Description

The Infineon Technologies IRLR3705ZPBF is a N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 42A (Tc)
  • Maximum Rds On at Id,Vgs: 8 mOhm @ 42A, 10V
  • Maximum Gate-Source Voltage: ±16V
  • Maximum Gate Charge: 66nC @ 5V
  • Package: D-Pak
  • Mounting Technology: SMD (SMT)
  • Power Dissipation (max): 130W (Tc)
  • Suitable for: Power management, motor drive, and control

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Quantity Unit Price Ext. Price
95+ $0.5535 $52.5825
195+ $0.5178 $100.9710
300+ $0.5000 $150.0000
435+ $0.4643 $201.9705
565+ $0.4464 $252.2160
700+ $0.4286 $300.0200
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