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Same model may have multiple batches, images only for reference.
IRLR3714Z Real Image
Same model may have multiple batches, images only for reference.

IRLR3714Z

Part No IRLR3714Z
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 20V 37A DPAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 37A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 15mOhm at 15A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.55V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 7.1nC at 4.5V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 560pF at 10V
Power Dissipation (Maximum) 35W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D-Pak
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 75
MSL Level 1 (Unlimited)
Win Source Part Number 1188629-IRLR3714Z
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRLR3714Z CAD Model

Description

The IRLR3714Z is an N-Channel MOSFET transistor manufactured by Infineon Technologies.

  • Category: discrete semiconductor products
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Power Dissipation (Maximum): 35W
  • Vds - Drain-Source Breakdown Voltage: 20V
  • Rds On (Maximum): 15mOhm @ 15A, 10V
  • Gate charge (Qg) (Maximum): 7.1nC @ 4.5V
  • Product Status: obsolete
  • Alternative Part Numbers: HUF76013D3S, IRLR3714ZTRPBF, and IRLR3714ZTRL

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Quantity Unit Price Ext. Price
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25+ $4.7257 $118.1425
38+ $4.5781 $173.9678
53+ $4.4303 $234.8059
68+ $4.2827 $291.2236
91+ $3.8397 $349.4127
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