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Same model may have multiple batches, images only for reference.
IRLR3802TRPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRLR3802TRPBF

Part No IRLR3802TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 12V 84A DPAK
Datasheet
IRLR3802TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 84A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 4.5V
Gate-Source Threshold Voltage 1.9V @ 250μA
Max Gate Charge 41nC @ 5V
Max Input Capacitance 2490pF @ 6V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 88W (Tc)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 15A, 4.5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047617-IRLR3802TRPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRLR3802TRPBF CAD Model

Description

The IRLR3802TRPBF is a high-performance N-channel MOSFET manufactured by Infineon Technologies.

  • Application: This component is designed for use in a wide range of applications in various industries
  • Maximum Power Dissipation: 88W (Tc)
  • Continuous Drain Current: 84A (Tc) @ 25°C
  • Drain-Source Breakdown Voltage: 12V
  • Gate-Source Threshold Voltage: 1.9V @ 250μA
  • Maximum Gate Charge: 41nC @ 5V
  • Maximum Input Capacitance: 2490pF @ 6V
  • Package: D-Pak case
  • Maximum Rds On: 8.5 mOhm @ 15A, 4.5V
  • Supply and Demand Status: Sufficient

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Quantity Unit Price Ext. Price
85+ $0.6909 $58.7265
205+ $0.5670 $116.2350
320+ $0.5492 $175.7440
435+ $0.5315 $231.2025
565+ $0.5139 $290.3535
755+ $0.4606 $347.7530
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