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Same model may have multiple batches, images only for reference.
IRLR3915PBF Real Image
Same model may have multiple batches, images only for reference.

IRLR3915PBF

Part No IRLR3915PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 30A DPAK
Datasheet
IRLR3915PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 92nC @ 10V
Max Input Capacitance 1870pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 120W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047619-IRLR3915PBF
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management, Motor Drive & Control
Ultra Librarian 3D Model Ultra Librarian IRLR3915PBF CAD Model

Description

The Infineon Technologies IRLR3915PBF is an N-channel MOSFET used in power management and motor drive & control applications.

  • Mounting Type: SMD (SMT)
  • Case/Package: D-Pak
  • Breakdown Voltage: 55V
  • Continuous Drain Current: 30A @ 25°C
  • Operating Temperature: -55°C to 175°C (TJ)
  • Drive Voltage: 5V or 10V
  • Maximum Rds on at Id,Vgs: 14 mOhm @ 30A, 10V
  • Product Status: Active

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