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IRLR6225TRPBF

Part No IRLR6225TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 20V 100A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 20V 100A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.1V @ 50μA
Max Gate Charge 72nC @ 4.5V
Max Input Capacitance 3770pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 63W (Tc)
Maximum Rds On at Id,Vgs 4 mOhm @ 21A, 4.5V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 017803-IRLR6225TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name IRLR6225
Introduction Date November 15, 2010
ECCN EAR99
Country of Origin China
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian IRLR6225TRPBF CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel polarity electronic component with a D-Pak case/package and a dimension of TO-252-3, DPak (2 Leads + Tab), SC-63.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 100A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 1.1V @ 50μA
  • Maximum Gate Charge: 72nC @ 4.5V
  • Maximum Rds On at Id,Vgs: 4 mOhm @ 21A, 4.5V
  • Power Dissipation: 63W (Tc)
  • Commonly Used in: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6584 $59.2560
215+ $0.5405 $116.2075
335+ $0.5232 $175.2720
460+ $0.5070 $233.2200
590+ $0.4897 $288.9230
790+ $0.4389 $346.7310
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 180 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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