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Same model may have multiple batches, images only for reference.
IRLR8103VPBF Real Image
Same model may have multiple batches, images only for reference.

IRLR8103VPBF

Part No IRLR8103VPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 91A DPAK
Datasheet
IRLR8103VPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 91A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 27nC @ 5V
Max Input Capacitance 2672pF @ 16V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 115W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047636-IRLR8103VPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRLR8103VPBF CAD Model

Description

The Infineon Technologies IRLR8103VPBF MOSFET is a surface-mount device with an N-channel polarity and a drain-source breakdown voltage of 30V.

  • Mounting: Surface Mount
  • Channel Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current (25°C Tc): 91A
  • Power Dissipation (Tc): 115W
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 27nC @ 5V
  • Package: D-Pak
  • Leads and Tab: 2
  • Operating Temperature: -55°C to 150°C (TJ)
  • Category: Discrete Semiconductor Products
  • Status: Not for New Designs

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240+ $0.4235 $101.6400
370+ $0.4103 $151.8110
505+ $0.3970 $200.4850
655+ $0.3838 $251.3890
875+ $0.3441 $301.0875
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