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Same model may have multiple batches, images only for reference.
IRLR8103VTRR Real Image
Same model may have multiple batches, images only for reference.

IRLR8103VTRR

Part No IRLR8103VTRR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 91A DPAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 91A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 27nC @ 5V
Max Input Capacitance 2672pF @ 16V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 115W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 128596-IRLR8103VTRR
Popularity Medium
Supply and Demand Status Limited
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian IRLR8103VTRR CAD Model

Description

The Infineon Technologies 128596-IRLR8103VTRR is an N-channel MOSFET with a maximum power dissipation of 115W (Tc).

  • Category: Discrete Semiconductor Products
  • Popularity: Medium
  • Mounting: SMD (SMT) technology
  • Case: D-Pak case
  • Status: Obsolete (EOL)
  • Supply and Demand Status: Limited
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 91A (Tc)

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