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Same model may have multiple batches, images only for reference.
IRLS3036TRRPBF Real Image
Same model may have multiple batches, images only for reference.

IRLS3036TRRPBF

Part No IRLS3036TRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 270A D2PAK
Datasheet
IRLS3036TRRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 140nC @ 4.5V
Max Input Capacitance 11210pF @ 50V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 380W (Tc)
Maximum Rds On at Id,Vgs 2.4 mOhm @ 165A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 040814-IRLS3036TRRPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLS3036TRRPBF CAD Model

Description

The IRLS3036TRRPBF from Infineon Technologies is an N-channel MOSFET transistor.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 195A
  • Maximum Power Dissipation: 380W
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 140nC @ 4.5V
  • Maximum Rds On: 2.4 mOhm @ 165A and 10V
  • Package: D2PAK
  • Mounting: SMD technology
  • Introduction Date: August 31, 2005
  • Status: Obsolete
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1583 $52.1235
110+ $0.9504 $104.5440
165+ $0.9207 $151.9155
225+ $0.8910 $200.4750
295+ $0.8613 $254.0835
390+ $0.7722 $301.1580
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Availability: 2,100 pieces
MOQ: 45 pcs
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