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IRLU2905PBF

Part No IRLU2905PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 42A I-PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 42A (Tc)
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 48nC @ 5V
Max Input Capacitance 1700pF @ 25V
Maximum Rds On at Id,Vgs 27 mOhm @ 25A, 10V
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1047674-IRLU2905PBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRLU2905PBF CAD Model

Description

The IRLU2905PBF is a Power MOSFET from Infineon Technologies. This MOSFET is designed for high-efficiency power switching applications. It combines low on-resistance with fast switching speeds to minimize power losses.

Applications:

  • DC-DC converters: Used in voltage regulation and power conversion.
  • Motor control: Employed in controlling the speed and torque of electric motors.
  • Power inverters: Used in inverters to convert DC power to AC power.
  • Load switching: Utilized to switch power to various loads in electronic systems.
  • Synchronous rectification: Used in place of diodes for higher efficiency rectification.

Features:

  • Low on-resistance (RDS(on)): Minimizes power loss due to conduction.
  • Fast switching speed: Reduces switching losses and improves efficiency.
  • Logic-level gate drive: Compatible with low-voltage logic circuits.
  • Avalanche rated: Withstands high energy transients.
  • Lead-free package: Compliant with environmental standards.

Benefits:

  • High efficiency: Low on-resistance and fast switching reduce power dissipation.
  • Simplified drive circuitry: Logic-level gate drive allows for easy interfacing with microcontrollers.
  • Robustness: Avalanche rating ensures reliable performance under transient conditions.
  • Environmental compliance: Lead-free package meets environmental regulations.
  • Compact design: Allows for use in space-constrained applications.

Additional Details:

The IRLU2905PBF has a drain-source voltage (VDS) rating of 55V and a continuous drain current (ID) rating of 42A. It comes in a through-hole package, typically TO-251 (IPAK). The gate threshold voltage (VGS(th)) is typically between 1V and 2.5V, making it suitable for logic-level driving. The total gate charge (Qg) is low, reducing the power required to switch the MOSFET. The operating junction temperature ranges from -55°C to +175°C. Its low RDS(on) value (typically 0.020 Ohms at VGS=10V) contributes to its high efficiency. It is commonly used in various industrial and automotive applications.

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