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Same model may have multiple batches, images only for reference.
IRLU3114ZPBF Real Image
Same model may have multiple batches, images only for reference.

IRLU3114ZPBF

Part No IRLU3114ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 42A I-PAK
Datasheet
IRLU3114ZPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 100μA
Max Gate Charge 56nC @ 4.5V
Max Input Capacitance 3810pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 4.9 mOhm @ 42A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 205486-IRLU3114ZPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLU3114ZPBF CAD Model

Description

The Infineon Technologies 205486-IRLU3114ZPBF is an N-Channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 140W (Tc)
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 42A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 100μA
  • Maximum Gate Charge: 56nC @ 4.5V
  • Maximum Input Capacitance: 3810pF @ 25V
  • Maximum Rds On: 4.9 mOhm @ 42A, 10V
  • Status: Obsolete (EOL)
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8073 $60.5475
175+ $0.6630 $116.0250
270+ $0.6422 $173.3940
375+ $0.6214 $233.0250
485+ $0.6006 $291.2910
645+ $0.5382 $347.1390
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Availability: 10,200 pieces
MOQ: 75 pcs
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