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Same model may have multiple batches, images only for reference.
IRLU3714PBF Real Image
Same model may have multiple batches, images only for reference.

IRLU3714PBF

Part No IRLU3714PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 36A I-PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 9.7nC @ 4.5V
Max Input Capacitance 670pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 47W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 205489-IRLU3714PBF
Popularity Medium
Supply and Demand Status Limited
Quantity per package 75
Ultra Librarian 3D Model Ultra Librarian IRLU3714PBF CAD Model

Description

The IRLU3714PBF is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 47W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 36A (Tc)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 9.7nC @ 4.5V
  • Maximum Input Capacitance: 670pF @ 10V
  • Packaging: Tube/rail
  • Mounting: Through hole
  • Popularity: Medium
  • Supply: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $12.8736 $64.3680
11+ $10.5636 $116.1996
17+ $10.2333 $173.9661
24+ $9.9030 $237.6720
31+ $9.5726 $296.7506
41+ $8.5828 $351.8948
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Availability: 3,090 pieces
MOQ: 5 pcs
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