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IRLU7821PBF

Part No IRLU7821PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 65A I-PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 14nC @ 4.5V
Max Input Capacitance 1030pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 205491-IRLU7821PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLU7821PBF CAD Model

Description

The Infineon Technologies IRLU7821PBF is a N-Channel MOSFET transistor that can handle a maximum power dissipation of 75W (Tc) and has a drain-source breakdown voltage of 30V.

  • Continuous Drain Current: 65A (Tc)
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 10 mOhm @ 15A, 10V
  • Package: Through-hole I-Pak with TO-251-3 Short Leads, IPak, TO-251AA dimensions
  • For Use In: Discrete semiconductor products
  • Popularity: Medium
  • Status: Obsolete (EOL)
  • Supply and Demand: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.3128 $57.8680
455+ $0.2566 $116.7530
700+ $0.2487 $174.0900
960+ $0.2407 $231.0720
1,245+ $0.2326 $289.5870
1,665+ $0.2086 $347.3190
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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