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IRLZ24NLPBF

Part No IRLZ24NLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 18A TO-262
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 15nC @ 5V
Max Input Capacitance 480pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.8W (Ta), 45W (Tc)
Maximum Rds On at Id,Vgs 60 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1047699-IRLZ24NLPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLZ24NLPBF CAD Model

Description

The Infineon Technologies 1047699-IRLZ24NLPBF is a MOSFET transistor that comes in a TO-262 package.

  • Package: TO-262
  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 18A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Max Gate Charge: 15nC @ 5V
  • Maximum Rds On at Id,Vgs: 60 mOhm @ 11A, 10V
  • Temperature Range: -55°C to 175°C (TJ)

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