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Same model may have multiple batches, images only for reference.
IRLZ34NL Real Image
Same model may have multiple batches, images only for reference.

IRLZ34NL

Part No IRLZ34NL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 30A TO-262
Datasheet
IRLZ34NL Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 25nC @ 5V
Max Input Capacitance 880pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.8W (Ta), 68W (Tc)
Maximum Rds On at Id,Vgs 35 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1047702-IRLZ34NL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLZ34NL CAD Model

Description

The Infineon Technologies N-channel MOSFET is a high-performance power MOSFET with a drain-source breakdown voltage of 55V and a continuous drain current of 30A @ 25°C.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 30A @ 25°C
  • Power Dissipation: 3.8W (Ta), 68W (Tc)
  • Drive Voltage: 4V, 10V
  • Package: TO-262
  • Case Style: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Gate Charge: 25nC @ 5V

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Quantity Unit Price Ext. Price
16+ $3.7378 $59.8048
38+ $3.0670 $116.5460
59+ $2.9711 $175.2949
81+ $2.8753 $232.8993
104+ $2.7795 $289.0680
140+ $2.4920 $348.8800
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Availability: 7,250 pieces
MOQ: 16 pcs
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