This is an Infineon Technologies OptiMOS™ series MOSFET (Metal Oxide) electronic component.

• Series: OptiMOS™
• FET Type: P-Channel
• Vdss (Drain to Source Voltage): 60V
• Power Dissipation: 1.8W (Ta), 4.2W (Tc)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Vgs (Max): ±20V
• Operating Temperature: -55°C to 150°C (TJ)
• MSL Level: 1 (Unlimited)
• REACH Status: REACH Unaffected
• HTSUS: 8541.29.0095
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Id (Continuous Drain Current) @ 25°C: 2.8A (Ta)
• Rds On (Max) @ Id, Vgs: 125mOhm @ 2.8A, 10V
• Vgs(th) (Max) @ Id: 4V @ 520μA
• Qg (Gate Charge) (Max) @ Vgs: 20.2 nC @ 10V
• Ciss (Input Capacitance) (Max) @ Vds: 790 pF @ 30V