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Same model may have multiple batches, images only for reference.
ISP16DP10LMXTSA1 Real Image
Same model may have multiple batches, images only for reference.

ISP16DP10LMXTSA1

Part No ISP16DP10LMXTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description SMALL SIGNAL MOSFETS PG-SOT223-4 / P-Channel 100 V 2.1A (Ta), 3.9A (Tc) 1.8W (Ta), 5W (Tc) Surface Mount PG-SOT223-4
Datasheet
ISP16DP10LMXTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 2.1A (Ta) , 3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 2V @ 1.037mA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 50 V
Power Dissipation (Max) 1.8W (Ta) , 5W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-4
Package / Case TO-261-4, TO-261AA
Base Product Number ISP16D
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1339476-ISP16DP10LMXTSA1
Ultra Librarian 3D Model Ultra Librarian ISP16DP10LMXTSA1 CAD Model

Description

The ISP16DP10LMXTSA1 is a P-channel MOSFET transistor with a package of tape & reel and TO-261-4, TO-261AA.

  • Standard Package: 1,000
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4
  • Vgs (Max): ±20V
  • Temperature Range: -55°C ~ 150°C (TJ)
  • ECCN: EAR99
  • REACH: Unaffected

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565+ $0.5344 $301.9360
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