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MMBT2222ALT1XT

Part No MMBT2222ALT1XT
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description Transistor Gp Bjt NPN 40V 0.6A 3-PIN SOT-23 T/r
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SOT-23
Current Rating 600 mA
Lead Free Yes
Packaging Cut Tape
RoHS Compliant
Voltage Rating (DC) 40 V
Win Source Part Number 1079396-MMBT2222ALT1XT
Categories RF Transistors(BJT)
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian MMBT2222ALT1XT CAD Model

Description

The MMBT2222ALT1XT is a small signal NPN bipolar junction transistor (BJT) manufactured by Infineon Technologies. It's designed for switching and amplification applications. It is known for its reliability and is often used in various electronic circuits.

Applications:

  • Low-Power Amplification
  • Switching Circuits
  • Portable Devices
  • Signal Processing
  • Driver Circuits

Features:

  • NPN Transistor
  • Collector Current (IC) up to 600 mA
  • Collector-Emitter Voltage (VCEO) typically around 40V
  • High-Speed Switching
  • Surface Mount Package (SOT-23)

Benefits:

  • Versatile Use: Suitable for both amplification and switching purposes.
  • Moderate Current Handling: Capable of managing currents up to 600 mA.
  • Efficient Switching: Fast switching times for digital applications.
  • Compact Design: SOT-23 package for smaller circuit board footprints.
  • Reliable Performance: Infineon is known for manufacturing reliable semiconductor devices.

Additional Details:

The MMBT2222ALT1XT is typically supplied in a SOT-23 package, allowing for surface mount assembly. Critical parameters to consider are the collector-emitter voltage (VCEO), collector current (IC), and power dissipation (PD). Always refer to the Infineon datasheet for precise electrical characteristics, thermal considerations, and application notes. Proper biasing is necessary for optimizing amplifier performance. When using the transistor as a switch, provide adequate base current to ensure saturation and minimize the voltage drop. This transistor is a solid choice where a dependable, general-purpose NPN BJT is required.

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