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Same model may have multiple batches, images only for reference.
SKW25N120 Real Image
Same model may have multiple batches, images only for reference.

SKW25N120

Part No SKW25N120
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 46A 313W TO247-3
Datasheet
SKW25N120 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 46A
Pulsed Collector Current 84A
Collector-emitter saturation voltage(Max) 3.6V @ 15V, 25A
Maximum Power Dissipation 313W
Total Switching Energy(Ets) 3.7mJ
Input Type Standard
Gate Charge 225nC
Turn-on and Turn-off delay time 45ns/730ns
Testing Conditions 800V, 25A, 22 Ohm, 15V
Reverse Recovery Time (trr) 90ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 211739-SKW25N120
Family Name SKW25N120
Introduction Date March 01, 2000
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SKW25N120 CAD Model

Description

The Infineon Technologies 211739-SKW25N120 is an NPT IGBT type electronic component that has a maximum collector-emitter breakdown voltage of 1200V and a maximum current collector of 46A.

  • Case or Package: PG-TO247-3
  • Total Switching Energy: 3.7mJ
  • Reverse Recovery Time (trr): 90ns
  • Gate Charge: 225nC
  • Turn-On and Turn-Off Delay Time: 45ns/730ns
  • Application: Discrete Semiconductor Products
  • New Designs: Not for new designs
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Halogen-Free: Compliant with halogen-free regulations
  • Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Current Collector: 46A

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