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ZXM61N03FTC

Part No ZXM61N03FTC
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 1.4A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 4.1nC @ 10V
Max Input Capacitance 150pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 625mW (Ta)
Maximum Rds On at Id,Vgs 220 mOhm @ 910mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1120362-ZXM61N03FTC
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian ZXM61N03FTC CAD Model

Description

Introducing the ZXM61N03FTC MOSFET from Diodes Incorporated

The ZXM61N03FTC is a cutting-edge N-channel enhancement mode field-effect transistor (MOSFET) brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This high-performance MOSFET is designed to deliver efficiency and reliability for a wide range of applications, particularly suitable for power management tasks.

With its compact SOT-23 package, the ZXM61N03FTC is an ideal choice for space-constrained applications, providing a perfect balance between footprint and performance. The device features a low on-resistance (R<sub>DS(on)) of just 70 milliohms at a V<sub>GS of 10V, which translates to reduced conduction losses and improved overall efficiency. This characteristic makes it a highly efficient component for power conversion and management circuits.

The ZXM61N03FTC supports a maximum continuous drain current (I<sub>D) of 1.2A, allowing it to handle significant power levels for its size. It also boasts a maximum drain-source voltage (V<sub>DSS) of 30V, providing a good safety margin for most low to medium voltage applications. This robust voltage rating ensures that the device can withstand transient conditions without suffering damage, thereby enhancing system reliability.

One of the key advantages of the ZXM61N03FTC is its fast switching speed, which is essential for reducing switching losses in high-frequency power supplies and DC-DC converters. This feature, combined with the low threshold voltage, ensures that the MOSFET can be driven directly by logic-level voltages, making it compatible with a wide range of control ICs and microcontrollers.

Furthermore, the ZXM61N03FTC is designed with Diodes Incorporated's advanced trench MOSFET technology, which provides superior performance in terms of gate charge and capacitance, further optimizing the device for fast-switching applications. The MOSFET also includes built-in thermal protection, offering enhanced safety and longevity for your electronic designs.

In summary, the ZXM61N03FTC from Diodes Incorporated is a highly efficient, reliable, and versatile N-channel MOSFET that is well-suited for a variety of power management tasks in both commercial and industrial environments. Its low on-resistance, high current capacity, and fast switching capabilities make it an excellent choice for designers looking to optimize their power circuitry.

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