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Same model may have multiple batches, images only for reference.
SMBTA64E6327 Infineon Technologies
Same model may have multiple batches, images only for reference.

SMBTA64E6327

Part No SMBTA64E6327
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description TRANS PNP DARL 30V 0.5A SOT-23
Datasheet
SMBTA64E6327 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP - Darlington
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 30V
Max Vce (sat) 1.5V @ 100μA, 100mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 20000 @ 100mA, 5V
Maximum Power Dissipation 330mW
Frequency - Transition 125MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Win Source Part Number 029268-SMBTA64E6327
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SMBTA64E6327 CAD Model

Description

The Infineon Technologies SMBTA64E6327 is a PNP Darlington transistor in a PG-SOT23-3 package.

  • Manufacturer: Infineon Technologies
  • Package: PG-SOT23-3
  • Maximum Collector Current: 500mA
  • Collector-Emitter Breakdown Voltage: 30V
  • Operating Temperature: 150°C (TJ)
  • Maximum Power Dissipation: 330mW
  • Typical Gain (hFE): 20000 @ 100mA and 5V
  • Maximum Vce (sat): 1.5V @ 100μA and 100mA
  • Collector Cut-off Current (Max): 100nA (ICBO)
  • Ideal For: low-power switching applications

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