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SN7002NH6327XTSA2

Part No SN7002NH6327XTSA2
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 200MA SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.8V @ 26μA
Max Gate Charge 1.5nC @ 10V
Max Input Capacitance 45pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 360mW (Ta)
Maximum Rds On at Id,Vgs 5 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1099031-SN7002NH6327XTSA2
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SN7002NH6327XTSA2 CAD Model

Description

The Infineon Technologies 1099031-SN7002NH6327XTSA2 MOSFET is a high-performance N-channel device designed for use in a wide range of electronic applications.

  • Channel Type: N-channel
  • Power Dissipation: 360mW
  • Drain-Source Breakdown Voltage: 60V
  • Application: Discrete semiconductor products
  • Gate-Source Threshold Voltage: 1.8V @ 26μA
  • Maximum Gate Charge: 1.5nC @ 10V
  • Maximum Input Capacitance: 45pF @ 25V
  • Maximum Rds On: 5 Ohm @ 500mA, 10V
  • Package: PG-SOT23-3
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
345+ $0.1456 $50.2320
840+ $0.1195 $100.3800
1,300+ $0.1157 $150.4100
1,790+ $0.1120 $200.4800
2,310+ $0.1083 $250.1730
3,090+ $0.0971 $300.0390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 83,630 pieces
MOQ: 345 pcs
Order Increment : 1 pcs
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