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Same model may have multiple batches, images only for reference.
SN7002NL6433HTMA1 Real Image
Same model may have multiple batches, images only for reference.

SN7002NL6433HTMA1

Part No SN7002NL6433HTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SN7002NL6433HTMA1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series SIPMOS®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 1.8V @ 26µA
Gate Charge (Qg) (Max) @ Vgs 1.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 45 pF @ 25 V
Power Dissipation (Max) 360mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-SOT23
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number SN7002N
Other Names SN7002N L6433,SN7002NL6433HTMA1TR,SP000247306,SN7002N L6433
Standard Package 10,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1278262-SN7002NL6433HTMA1
Ultra Librarian 3D Model Ultra Librarian SN7002NL6433HTMA1 CAD Model

Description

The Infineon Technologies SIPMOS MOSFET is a high-performance N-Channel FET designed for applications in Discrete Semiconductor Products.

  • Drain to Source Voltage (Vdss): 60 V
  • Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Mounting: SMD (SMT)
  • Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 26μA
  • Power Dissipation (Max): 360mW (Ta)
  • Package: TO-236-3, SC-59, SOT-23-3
  • Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
  • Temperature Range: -55°C ~ 150°C (TJ)
  • Status: Obsolete product

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